调制损耗对硅基MZI结构光调制器非线性特性的影响  

The Influence of Modulating Loss on the Nonlinear Property of the MZI-based Optical Silicon Modulator

作　　者：桂林[1] 左健存[1] 邵宇丰[1] 孙秋冬[1] 王胜利[2] 周志彬[3] 

机构地区：[1]上海第二工业大学计算机与信息工程学院,长沙410081 [2]上海第二工业大学文理学部,上海201209 [3]湖南师范大学物理与信息科学学院,长沙410081

出　　处：《光子学报》2016年第5期69-74,共6页Acta Photonica Sinica

基　　金：上海第二工业大学校基金项目(Nos.EGD14XQD03;EGD14XQD01;EGD16XQD07);上海第二工业大学校级重点学科(No.XXKZD1302);湖南省自然科学基金(No.11JJ6053)资助~~

摘　　要：针对基于马赫-曾德干涉仪结构的硅基光调制器中非线性电光响应的问题,采用包含PN结非线性调制损耗和非线性折射率变化的模型,通过数值仿真方法,研究了上下两臂对称和不对称两种情况下,调制损耗对硅基光调制器非线性的影响.对比考虑调制损耗和忽略调制损耗的模型,发现在常规大信号情况下,当光调制器偏置相位为0时,调制损耗使得三次谐波增强,四次谐波减弱;当光调制器偏置相位为π/2时,调制损耗使得二次和四次谐波增强;而在小信号情况下,三次和四次等高次谐波不明显,在光调制器偏置相位为0时,调制损耗在光调制器上下两臂不对称情况下增加了基频分量串扰;在光调制器偏置相位为π/2时,调制损耗的影响主要表现为增加了二次谐波分量.Aiming at the nonlinear electro-optical response in the Mach-Zehnder Interferometer （MZI）-based silicon modulator, the model with the nonlinear modulating loss in PN junction and the nonlinearrefractive index changing was utilized, and the influence of modulating loss on the silicon modulator wasinvestigated for two cases： symmetric arm or asymmetric arm in the MZI-based modulator. By takingaccount of the modulating loss in the model, the results can be obtained that in the condition of largesignal, the third order harmonic component is enhanced and the fourth order harmonic component isreduced when the bias phase of the optical modulator is 0, and the second order and fourth order harmoniccomponent are all enhanced when the bias phase of the optical modulator is n/2. While in the condition ofsmall signal, the high order harmonic components, such as the third order and fourth order harmoniccomponents, are not obvious, and the crosstalk of fundamental frequency is enhanced by the modulatingloss when the bias phase of the optical modulator is 0 and two arms in the modulator are asymmetric, thesecond order harmonic component is enhanced by the modulating loss when the bias phase of the opticalmodulator is n/2.

关 键 词：硅光子学 光调制器 非对称马赫-曾德干涉仪结构 非线性 光通信 

分 类 号：TN256[电子电信—物理电子学]