含两个荷控忆阻器的五阶混沌电路研究  

Analysis of a five-order chaotic circuit with two charge-controlled memristors

作　　者：王维[1] 陈争 李鑫[1] 曾以成[1] 

机构地区：[1]湘潭大学微电子科学与工程系 [2]75714部队

出　　处：《电子元件与材料》2016年第7期91-97,共7页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.61471310)

摘　　要：忆阻器作为一种具有记忆功能的新型非线性元件,被广泛应用于非线性电路系统设计中。利用两个基于荷控光滑模型的忆阻器以及采用常见的线性电子元件电感、电容、负电阻等设计了一种新的五阶混沌振荡电路。采用常规的系统动力学分析方法,分析了系统平衡点稳定性、相图、李雅普诺夫指数谱和分叉图,研究了系统随电路参数和荷控忆阻器初始状态变量变化的非线性动力学特性。Matlab数值仿真结果验证了理论分析的正确性。The memristor is a new nonlinear circuit component with unique memory characteristics, which is used todesign nonlinear systems widely. A novel five-order chaotic oscillation circuit was constructed by two charge-controlledmemristors and two inductors, a capacitor, a negative resistor. Analysis of equilibria stability, phase diagrams, Lyapunovexponent spectrum and bifurcation diagrams of the system were presented. The nonlinear dynamics of the system with thevariation of circuit parameters and initial conditions of charge-controlled memristors were demonstrated by means ofconventional methods. The simulation results on Matlab platform are well consistent with theoretical analysis.

关 键 词：混沌电路 相图 动力学 荷控忆阻器 非线性系统 数值仿真 

分 类 号：TN918[电子电信—通信与信息系统]