IGBT驱动电路建模及栅极电阻的设计  

Model of IGBT Driving Circuit and the Design of Grid Resistance

作　　者：张婷婷[1] 蔡逢煌[1] 林琼斌[1] 王武[1] 

机构地区：[1]福州大学,福建福州350108

出　　处：《电器与能效管理技术》2016年第10期13-17,共5页Electrical & Energy Management Technology

基　　金：福建省自然科学基金(2013J01178)

摘　　要：针对IGBT器件驱动电路的结构,分析了IGBT器件门极控制机理,并建立了开关驱动模型。IGBT开关动作受极间寄生电容充放电的控制,而极间电容的充放电又受栅极电阻的控制。栅极电阻影响IGBT开关时间、开关损耗、续流二极管的开关特性及其他各种参数。从频域和时域详细分析了栅极振荡产生的机理以及栅极电阻的选择对系统性能的影响。仿真和试验结果表明,可以针对驱动电路的要求设计合适的电阻。Aiming at the structure of IGBT driving circuit, IGBT gate control mechanism was analyzed and the switch driver model was established. IGBT switch action is controlled by the interelectrocharging and discharging,while charging and discharging electrode capacitance is under the control of the gridresistance. Grid resistance afect the switch on-off time and the wear and tear of switch anwheel diode, etc. Choosing the wrong grid resistance may lead to serious problems. Therefore selecting andoptimization of gird resistance is a research hot and difficult spot. This paper analyzed the mechanism of grid oscillation by using linear system time domain and frequency domain analysis and deduced the relationship between each parameter and oscillation and the ideal grid resistor values. The simulation and experimentawe can design appropriate grid resistor according the requirements of driving circuit.

关 键 词：IGBT 驱动电路建模 栅极电阻设计 栅极振荡 

分 类 号：TM135[电气工程—电工理论与新技术]