Band 40波段体声波滤波器的设计  

Design of a Bulk Acoustic Wave Filter for Band 40

作　　者：韩茜茜[1] 欧毅[1] 李志刚[1] 欧文[1] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029

出　　处：《微纳电子技术》2016年第7期444-448,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金面上项目(61274119);国家自然科学基金青年项目(61306141)

摘　　要：射频(RF)滤波器在4G移动通信(如Band 40波段)中具有广泛应用。描述了基于薄膜体声波谐振器(FBAR)技术的RF滤波器的设计和制作方法。体声波滤波器是由FBAR以T型结构级联的方式实现的。在滤波器的设计过程中,为了使仿真结果更接近于实际情况,采用考虑电极和衬底间耦合效应的改进的Mason模型对FBAR进行性能仿真和优化。最后,在8英寸(1英寸=2.54 cm)CMOS工艺线上对此滤波器进行了流片。测试结果表明,Band 40波段的体声波滤波器具有低的通带插入损耗(小于3 dB)、高的带外抑制(大于40 dB)和快速滚降特性。The radio frequency（RF）filter can be widely used in the 4G mobile communication（such as Band40）.A RF filter based on the film bulk acoustic resonator（FBAR）technology was designed and fabricated.The bulk acoustic wave filter was composed of a group of FBARs connected in T-type structure.In order to improve the accuracy of simulation result,an improved Mason model was introduced to simulate and optimize the FBAR by considering the coupling effect between electrode and substrate.The filter was fabricated by the 8-inch（1inch=2.54 cm）CMOS process.The test results show that the bulk acoustic wave filter for Band40 has low passband insertion loss（less than 3 dB）,high out-of-band rejection（greater than 40 dB）and fast roll-off characteristic.

关 键 词：薄膜体声波谐振器(FBAR) 射频(RF)滤波器 BAND 40 Mason模型 T型结构 

分 类 号：TN713[电子电信—电路与系统]