磁控溅射Al-Fe-Sn薄膜的电输运性能（英文）  

Electrical Transportation Behavior of Magnetron Sputtered Al-Fe-Sn Thin Film

作　　者：赵冠楠[1] 郑增[1] 耿开杰 张晴[1] 张永[1] 严彪[1] 

机构地区：[1]同济大学,上海200092

出　　处：《稀有金属材料与工程》2016年第5期1142-1146,共5页Rare Metal Materials and Engineering

摘　　要：在电子工业中,为了制备低电阻率的Al合金薄膜,需要对薄膜进行退火。虽然材料的电阻率与其电输运性能密切相关,然而到目前为止,对于铝合金薄膜的电输运性能研究甚少。本实验首先利用TEM对于磁控溅射铝合金薄膜的结构,特别是对其与基底界面处的结构进行了表征。在此基础上,利用霍尔效应测试了解界面状态的变化对于霍尔载流子浓度及迁移率的影响。结果表明,在退火过程中,薄膜与基底之间通过扩散形成紧密接触,从而使得合金薄膜同时具有较高的载流子浓度以及载流子迁移率。最后,利用一个新提出的能带模型,解释所观察到的界面变化对于电导率的影响。During the manufacturing process of Al-based thin films for electronic applications, a post-deposition annealing is required in order to achieve lower resistivity. However, the electrical transportation behavior of the magnetron sputtered Al film has been rarely investigated so far. To approach this objective, we have explored the microstructures of the films before and after annealing with emphasis on the structural features related to diffusion and interface using TEM observation. Hall-effect measurement was employed to determine the variation of carrier density and mobility brought by the evolution originating at the interface. The results demonstrate that during annealing an intimate contact is formed between the film and the substrate via diffusion, leading to a combination of high mobility and high density of the carriers. A model was proposed from the aspect of energy bands in order to explain the positive effect of the interfacial phenomenon upon electron conductivity.

关 键 词：电阻率 铝合金薄膜 电输运 

分 类 号：TG146.21[一般工业技术—材料科学与工程] TB383.2[金属学及工艺—金属材料]