Ce、Pr共掺LSO多晶薄膜的溶胶–凝胶法制备及其发光性能  

Fabrication and Luminescence Properties of Polycrystalline Ce, Pr Co-doped LSO Thin Films by Sol-Gel Method

作　　者：张晓欣[1] 谢建军[1] 范灵聪[1] 林德宝[1] 陈旭[2] 施鹰[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200444 [2]上海大学生命科学学院,上海200444

出　　处：《无机材料学报》2016年第6期647-651,共5页Journal of Inorganic Materials

基　　金：上海市科委科技基金(14520500300);国家自然科学基金(51172139)~~

摘　　要：采用溶胶–凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce^(3+)、Pr^(3+)共掺杂的硅酸镥(Lu_2SiO_5)薄膜,采用X射线衍射(XRD)、扫描电镜(SEM)和荧光光谱(PL)对(Ce,Pr):Lu_2SiO_5薄膜的物相、表面形貌及发光性质进行了研究和表征。结果表明:薄膜样品在1000℃下形成了A-Lu_2SiO_5纯相;在1100℃下形成了B-Lu_2SiO_5纯相。经1100℃煅烧后,通过SEM可以观察到薄膜表面均匀、平整、无裂纹,晶粒大小为200~300 nm,旋涂10层的薄膜厚度约为320 nm。从PL谱中可以发现:在共掺杂体系里,Pr^(3+)在跃迁过程中,有一部分能量传递给Ce^(3+)离子,使Ce^(3+)产生特征能级跃迁,并且使Ce^(3+)发射强度比单掺杂Ce^(3+)时的发射强度更强。Lutetium oxyorthosilicate （Lu2SiO5, LSO） films co-doped with Ce3＋ and Pr3＋ was synthesized on cleaned silicon （111） substrates by Sol-Gel route with a spin-coating technique. XRD patterns indicated that the films were crystallized into A-type Lu2SiO5 phase at 1000℃, followed by a phase transition to B-type Lu2SiO5 at 1100℃. SEM observations revealed that the surface of the films was smooth, homogeneous and crack-free when the samples were calcined under 1100℃. The average grain size of the crystal particles was 200-300 nm and the thickness of the thin film was about 320 nm when the coating layer number up to 10. The energy transference from Pr3＋ to Ce3＋ in Lu2SiO5 host was observed and discussed. The luminescence intensity of Ce3＋ can be improved after Pr3＋ co-doping.

关 键 词：溶胶–凝胶法 LSO薄膜 发光 旋涂法 Ce3+  Pr3+共掺杂 

分 类 号：TQ174[化学工程—陶瓷工业]