考虑寄生参数的高压GaN高电子迁移率晶体管的逆变器动态过程分析  

Dynamic Analysis of Inverter Based on High Voltage GaN High Electron Mobility Transistor

作　　者：张雅静[1] 郑琼林[2] 李艳[2] 

机构地区：[1]北京化工大学信息科学与技术学院,北京100029 [2]北京交通大学电气工程学院,北京100044

出　　处：《电工技术学报》2016年第12期126-134,共9页Transactions of China Electrotechnical Society

基　　金：中央高校基本科研业务费专项资金资助项目(ZY1505)

摘　　要：近年来随着氮化镓器件制造工艺的迅速发展,氮化镓高电子迁移率晶体管(GaN HEMT)已经开始应用在电力电子领域。GaN HEMT以其低寄生参数、无反向恢复损耗、高开通速度等特点,可降低开关管的开关损耗。本文以600V GaN HEMT为研究对象,研究其共源共栅(Cascode)结构引起的开关动态过程及其寄生参数的影响。建立了600V GaN HEMT等效模型并详细推导了其在单相逆变器中开关管正向导通、正向关断、反向续流导通和反向续流关断四种情况的动态过程。GaN HEMT的等效电路考虑了对开关过程及开关损耗有重要影响的寄生电感和寄生电容。理论、仿真及实验证明了Cascode GaN HEMT器件中寄生电感L_(int1)、L_(int3)和L_S直接影响开关管的动态过程进而影响开关管的开关损耗。In recent years with the rapid development of the manufacturing process of GaN devices, gallium nitride high electron mobility transistor（GAN HEMT） has begun to apply in the field of power electronics. GaN HEMT has the characteristics of low parasitic parameters, no reverse recovery losses and high speed, which will reduce the switching losses of the device. Taken the 600 V GaN HEMT as an example,this paper studied the switch dynamic process and the effects of parasitic caused by the cascode structure of the switch. This paper established a 600 V GaN HEMT equivalent model, as well as derived the dynamic processes under four cases in a single phase inverter. The four cases are positive switch conduction, the forward turn off, reverse freewheeling turn on and reverse wheeling turn off. The equivalent circuit of GaN HEMT considers the parasitic inductance that has great impacts on the switching process and the switching loss. The effects of the parasitic parameters are identified and verified by simulation and experiment results. L_（int1）, L_（int3） and L_S directly affect the dynamic process of the switch and further affect the switching losses of the switch.

关 键 词：宽禁带半导体器件 氮化镓高电子迁移率晶体管 动态过程 

分 类 号：TM46[电气工程—电器]