C面SiC衬底上N面GaN的MOCVD制备及特性研究（英文）  

N-face GaN epilayer grown on C-face SiC substrate by MOCVD

作　　者：宋世巍[1] 张东[1,2] 赵琰[1] 王存旭[1] 柯昀洁[1] 李昱材[1] 王健[1] 王刚[1] 丁艳波[1] 王晗[1] 刘莉莹[1] 郭瑞[1] 

机构地区：[1]沈阳工程学院新能源学院,沈阳110136 [2]大连理工大学物理与光电工程学院,辽宁大连116024

出　　处：《沈阳师范大学学报（自然科学版）》2016年第2期140-143,共4页Journal of Shenyang Normal University:Natural Science Edition

基　　金：Project supported by the Ministry of Education Key Laboratory under Grant(LABKF1406);Education Department of Liaoning Province(L2015377,L2014516)

摘　　要：Ga面GaN基器件结构中存在巨大的极化场,引起载流子溢流等问题,严重的损害了器件的性能。而N面GaN则可以使极化场反转,从而解决这些问题。详细研究了在C面SiC衬底上N面GaN的MOCVD外延生长和性质。N面GaN表面非常粗糙,薄膜中刃位错和混合位错的含量较高。在Si掺杂的N面GaN的室温PL谱中没有观测到黄带的产生。利用热磷酸溶液对N面GaN腐蚀,在外延膜的表面产生了大量的Ga空位,对应的PL谱出现了黄带,确定黄带来源于Ga空位。经过腐蚀后的GaN呈12面锥体形貌,锥体的形成可以弛豫薄膜中的张应力,此外,随着腐蚀的进行,低温PL谱的半峰宽变窄。The Ga-face GaN-based device exist a great polarization field,which cause carriers overflow and other problems to degrade the performance of GaN-based devices.However,N-face GaN can resolve these problems with the inversion of the polarization field.The N-face GaN epilayer was prepared on the C-face SiC substrate by MOCVD system,and the basic characters of the N-face GaN were investigated.N-face GaN has a rough surface,and exists a lot of edge dislocations and mixed dislocations.The yellow band is not observed at room temperature PL spectra despite a lot of Si-doped.After a phosphoric acid solution etching,a large number of Ga vacancies are produced on the surface of epilayer,and the corresponding yellow band appeared,which indicated the yellow band origins from Ga vacancy.After etching,GaN surface covered 12 pyramidal structures,which relaxes the tensile stress.In addition,as corrosion progresses,FWHM of low temperature PL spectra narrowed.Key words：N-face GaN;photoluminescence;gallium vacancy

关 键 词：N面GaN 光致发光 镓空位 

分 类 号：TN304.55[电子电信—物理电子学]