水热法生长ZnO：Ga晶体过程及性能研究  

Study of Hydrothermal Growth Process and Properties of ZnO:Ga Crystal

作　　者：张一骐 王金亮[1] 任孟德[1] 雷威[2] 左艳彬[1] 

机构地区：[1]中国有色桂林矿产地质研究院有限公司,国家特种矿物材料工程技术研究中心,广西超硬材料重点实验室,广西桂林541004 [2]桂林理工大学地球科学学院,广西桂林541006

出　　处：《超硬材料工程》2016年第3期57-62,共6页Superhard Material Engineering

基　　金：广西自然科学基金(2013GXNSFBA019262);中国科学院技术开发项目(2012EG115007);广西科学研究与技术开发计划(桂科攻1598008-9)

摘　　要：采用水热法于36#水热反应釜中在四种条件下制备了ZnO:Ga晶体,对比了四种参数条件下晶体的生长速度及生长质量,深入分析了过快生长速度工艺下晶体产生微孔的原因。在D工艺条件下(4MKOH+0.25M LiOH+1.25mlH_2O_2,360-340℃)获得了生长速度适宜、高质量的ZnO:Ga单晶,晶体最大尺寸达到32.36mm×27.46mm×5.52mm。Ga:ZnO晶体的生长习性为形成一个单锥六棱具有显露p锥面即(101-1)和负极面(0001-)的柱体,而柱显露m面(101-0)发生退化。测试ZnO:Ga晶体的双晶摇摆曲线显示晶体具有优良的结晶质量,其中+c[002]晶面的FWHM为11arc sec,而-c晶面的结晶质量略低于+c方向,FWHM为17arc sec。较之纯ZnO晶体,Ga:ZnO晶体在750nm处透过率曲线开始下降,其在大于750nm波长的可见及红外光区的特异吸收性能将具有广泛的应用前景。ZnO：Ga crystals were prepared by hydrothermal method in 36 # hydrothermal reaction kettle under four different conditions.The deep analysis of the cause of microvoids in crystals under excessively fast growing rate process has been done through comparison of the growth rate and quality of the crystals under the four parameter conditions.ZnO：Ga crystals of appropriate growth rate and high quality with a maximum size of 32.36mm×24.84mm×5.40 mm have been grown under the D condition（4MKOH ＋0.25 M LiOH＋1.25mlH_2O_2,360-340℃）.The growth habit of Ga：ZnO crystal is to form a single-cone hexagonal prism with visible p pyramidal face（101-1）and cathode face（0001-）while the visible m face（101-0）degenerates.Double crystal rocking curve for ZnO：Ga crystal test indicates an excellent crystallization quality,of which the FWHM for＋c[002]face is 11 arc sec.The crystallization quality for-c face is slightly lower than that of＋c,with 17 arc sec for FWHM.Compared to pure ZnO crystal,the transmittance curve of Ga：ZnO crystal starts to decline at 750 nm.The visibleness of Ga：ZnO crystal above 750 nm wavelength and its distinctive absorption capability will have an extensive application prospect.

关 键 词：ZNO:GA 水热法 晶体 过程 性能 

分 类 号：O78[理学—晶体学]