基于电桥失衡效应的高随机性PUF电路设计  

Design of High Randomness PUF Circuit Based on Bridge Unbalance Effect

作　　者：钱浩宇[1] 汪鹏君[1] 李刚[1] 

机构地区：[1]宁波大学电路与系统研究所,浙江宁波315211

出　　处：《宁波大学学报（理工版）》2016年第3期56-61,共6页Journal of Ningbo University：Natural Science and Engineering Edition

基　　金：国家自然科学基金(61474068;61274132);浙江省自然科学基金(LQ14F040001)

摘　　要：通过对物理不可克隆函数(Physical Unclonable Functions,PUF)电路和电桥失衡效应的研究,提出一种高随机性PUF电路设计方案.该方案首先利用工艺偏差导致电桥失衡产生随机偏差电压,然后结合电压型灵敏放大器产生随机的、不可克隆的响应信号.在TSMC 65 nm CMOS工艺下,采用全定制方法设计PUF电路,PUF单元电路的版图面积为2.23μm×2.43μm.通过Spectre软件,在不同电压下对所设计PUF电路进行Monte Carlo仿真验证,分析其逻辑功能、随机性等特性.实验结果表明:所设计的PUF电路在电源电压1.2 V和温度25℃下随机性可达51.8%.Through researching on the physical unclonable function （PUF） circuit and bridge unbalance effect, a high randomness PUF circuit is proposed in this paper. In this scheme, random deviation voltages are generated from bridge unbalance caused by process deviation. Then, random deviation voltages are inputted into sense amplifier to obtain response which is random and unclonable. Under TSMC 65nm CMOS process, the full custom design method is adopted. The layout area of PUF circuit is 2.23μm×2.43μm. Using Spectre software, Monte Carlo simulation results verify the designed PUF circuit under different voltage conditions. And also, the logical function and random characteristics are analyzed based on the simulation results. At 1.2V ＆ 25℃, the randomness of the proposed PUF circuit achieves 51.8%.

关 键 词：物理不可克隆函数 电桥失衡效应 随机性 电路设计 

分 类 号：TP331[自动化与计算机技术—计算机系统结构]