片上集成光电微能源工艺兼容性及器件特性研究(英文)  

Research on Process Compatibility and Device Characteristics of Photoelectric Micro-Power Supply Integrated On-Chip

作　　者：肖丽仙[1] 何永泰[1] 刘晋豪[1] 李雷[1] 

机构地区：[1]楚雄师范学院物理与电子科学学院,云南楚雄675000

出　　处：《传感技术学报》2016年第6期834-840,共7页Chinese Journal of Sensors and Actuators

基　　金：National Natural Science Foundation of China(61271159);Education Department Major Project Foundation of Yunnan Province(zb2014014)

摘　　要：根据暂存式光电微能源系统组成器件的制备工艺特点,提出了基于SOI晶片的光电微能源片上集成方案。主要工艺包括绝缘沟槽刻蚀、离子注入、氧化等,具有较好的制备工艺兼容性。另外,根据片上集成方案,对器件特性进行了研究。结果表明,光伏电池的转换效率为9.7%,NMOS管阈值电压、漏极反向击穿电压VT分别为0.98 V和31.97 V,NPN三极管的电流放大倍数、集电极-发射极之间击穿电压约为83 V和12 V。各器件特性满足系统工作要求,集成方案具有较好的可行性。The on- chip integration scheme of photoelectric Micro- power supply based on SOI wafer is proposedthrough the analysis of the preparation process of component devices for temporary-storage photoelectric Micro-pow-er supply system. The main process includes insulation groove etching,ion implantation,and oxidation and so on.The scheme is of good preparation process compatibility. In addition,analysis of device characteristics is made basedon on-chip integration scheme. Experimental results show that the conversion efficiency of photoelectric cell is 9.7%.The threshold voltage and reverse breakdown voltage of drain electrode of NMOS field-effect transistor is 0.98 V and31.97 V,respectively. The current magnification of NPN transistor is 83 and breakdown voltage between emitter andcollector is 12 V. All integrated devices meet the system requirements. The integration scheme is of good feasibility.

关 键 词：光电微能源 片上集成 工艺方案 兼容性 器件特性 

分 类 号：TN453[电子电信—微电子学与固体电子学]