基于ΔV_(GS)高阶温度补偿的高精度CMOS带隙基准源  

A High Precision Bandgap Reference with High-Order Temperature Compensation by ΔV_(GS)

作　　者：陈培腾 王卫东[1] 黎官华 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《电子器件》2016年第3期526-530,共5页Chinese Journal of Electron Devices

摘　　要：利用两个工作在亚阈区的MOS管的栅源电压差ΔVGS产生高阶补偿量,对传统的BJT带隙基准源进行高阶温度补偿。设计一种基于ΔVGS高阶温度补偿的高精度CMOS带隙基准。电路基于CSMC 0.5μm标准CMOS工艺设计,仿真结果表明:在5 V电源电压下,基准输出电压为1.258 V;在-40℃~125℃的温度范围内,温度系数为1.24×10-6/℃;低频时电源抑制比PSRR为-68 d B;电源电压在3.5 V^6.5 V范围内工作,线性调整率为0.4 m V/V。适用于高精度带隙基准源。The difference in the gate-source voltageΔVGS by two MOS that work in the weak inversion,produces the high-end compensation ,which carries on high-order temperature compensation for the traditional BJT bandgap reference. A high precision bandgap reference with high-order temperature compensation can be designed byΔVGS. And the circuit is designed by using CSMC 0.5 μm standard CMOS process. The simulation shows that：when the supply voltage is 5 V,the output reference voltage is 1.258 V;during the range of temperature-40℃～125℃,the temperature coefficient is 1.24×10^（-6）/℃;the PSRR is-68 dB at low frequency;when the voltage works during 3.5 V～6.5 V,linear regulation is 0.4 mV/V. It is suitable for high precision bandgap voltage reference.

关 键 词：带隙基准(BGR Bandgap Reference) 亚阈区 低温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]