基于比率测量的CMOS高温温度传感器设计  

Design of High Temperature CMOS Sensor Based on Ratio Measurement

作　　者：包志均[1] 王艳华[2] 

机构地区：[1]河南广播电视大学信息工程系,郑州450008 [2]河南信息工程专修学院信息与工程系,郑州450046

出　　处：《电子器件》2016年第3期540-545,共6页Chinese Journal of Electron Devices

摘　　要：针对在高温环境下温度传感器的测量性能降低问题，提出了一种在能够25℃～225℃的温度范围内运行，基于比率测量的高性能带隙温度传感器。该温度传感器使用简单的时域体系结构，将自动调零的偏移消除与偏移消除进行合并提高性能，然后通过在数字处理模块实现的映射函数，将得到的比率转换成比率输出，从而消除对带隙基准（BGR）的需要。传感器使用CMOS工艺组装而成，芯片面积为0.41 mm2。实验测试结果显示该传感器在最差情况下的错误仅为＋1.6℃/-1.5℃，并且当电源为4.5 V时，传感器仅消耗20μA的电流。According to the measurement performance degradation of the temperature sensor in high temperature en-vironment,a high performance bandgap temperature sensor based on the ratio measurement is presented,which can run in the temperature range of 25℃~225℃. The temperature sensor using a simple time domain architecture,will automatically adjust the zero offset cancellation and offset cancellation are combined to improve the performance , then in the digital processing module the mapping function is realized,the ratio will be converted into output ratio, thereby eliminating of band gap reference（BGR）need. The sensor is made of CMOS process and the chip area is 0.41 mm2. The experimental tests show that the error of the sensor in the worst case is only＋1.6 ℃/-1.5 ℃,and when the power supply is 4.5 V,the sensor consumes only 20μA of current.

关 键 词：带隙温度传感器 比率测量 高性能 高温环境 

分 类 号：TP212.11[自动化与计算机技术—检测技术与自动化装置]