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作 者:胡存刚[1,2,3] 姚培[1] 张云雷[1,2] 王群京[1,2,3] 郑常宝[1,2,3]
机构地区:[1]安徽大学电气工程与其自动化学院合肥230601 [2]安徽大学安徽省工业节电与电能质量控制协同创新中心合肥230601 [3]安徽大学教育部电能质量工程研究中心合肥230601
出 处:《电工技术学报》2016年第13期82-91,共10页Transactions of China Electrotechnical Society
基 金:国家自然科学基金(51307002);安徽省高校自然科学研究重大项目(KJ2016SD02)资助
摘 要:提出了一种采用金属-氧化物半导体场效应晶体管(MOSFET)为开关器件的高效非隔离单相并网逆变器拓扑及与该拓扑相对应的控制策略。该新型非隔离单相并网逆变器拓扑可以消除共模电压的高频脉动,有效地抑制漏电流。提出的调制方法改变了逆变器的续流电流路径,使得续流电流只经过MOSFET,不经过通态损耗较大的体二极管,因而减小器件的通态损耗和完全消除了二极管的反向恢复损耗,提高了并网逆变器的效率。并对该拓扑的闭环控制策略和损耗分析进行了研究。最后通过仿真和实验验证了该拓扑及控制策略的有效性。A high-efficiency non-isolated single-phase grid-connected inverter topology using metal oxidesemiconductor field effect transistor ( MOSFET) as the switch and the corresponding control strategy are presentedin this paper. This topology can elim inate the high frequency fluctuation of the common mode voltage, and thuseffectively restrain the leakage current. A novel current freewheel path is investigated, which is only through theMOSFET instead of the body diode with high on-state loss. The conduction losses of the whole devices are thenreduced, and the reverse recovery losses of the diodes are completely elim inated. Therefore, the efficiency of thegrid-connected inverter is improved. In addition, the losses analysis and the closed-loop control strategy aredescribed. The sim ulation and experimental results are provided to verify the effectiveness of the proposed topologyand control strategy.
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