铝纳米线阵列的制备及生长机理  

Fabrication and Growth Mechanism of Al Nanowire Array

作　　者：鹿业波[1] 顾金梅[1] 刘楚辉[1] 彭文利[1] 

机构地区：[1]嘉兴学院机电工程学院,浙江嘉兴314001

出　　处：《半导体光电》2016年第3期370-372,377,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(51305165);浙江省钱江人才项目(QJD1302007)

摘　　要：分别利用高密度电流和高温加热作为驱动力,在不同试样中产生原子迁移现象,并进行对比试验研究制备铝纳米线阵列的可行性。试验结果表明,在局部区域利用高密度电流成功制备了铝纳米线阵列。由于试样制备过程中蚀刻工艺带来的误差,导致电流密度相应变化,使试样在部分区域出现了爆破现象。高温加热的试样表面产生了大量铝纳米颗粒,但是由于原子迁移强度过低,未能在对应试样中制备出铝纳米线阵列。High-density current and heating at high temperature were used as the driving force,respectively,to form Al nanowire array in two different samples.It was found that the Al array was observed in local area.The explosion phenomenon was also observed due to an increase of current density caused by etching error in sample preparation process.A lot of Al nanoparticles were formed due to heating,and Al nanowire array does not appear because of low ability of atomic diffusion.

关 键 词：原子迁移 铝纳米线 阵列 原子积聚 

分 类 号：TB383[一般工业技术—材料科学与工程]