量子点场效应单光子探测器二维电子气电子迁移率分析  

Two-dimensional Electron Gas Electron Mobility Analysis of the Quantum Dots Field Effect Single Photon Detector

作　　者：李勇[1] 

机构地区：[1]河南质量工程职业学院,河南平顶山467000

出　　处：《半导体光电》2016年第3期383-386,391,共5页Semiconductor Optoelectronics

基　　金：平顶山市科技合作计划项目(2013089)

摘　　要：设计了一种基于场效应晶体管的量子点场效应单光子探测器,利用二维弛豫时间的近似理论建立了二维电子气电子迁移率的散射模型,通过求解量子点场效应单光子探测器GaAs/AlxGa1-xAs二维电子气系统电子和声子相互作用的Hamiltonian函数,得到了不同温度、不同Al组分以及不同二维电子气电子面密度条件下晶格振动散射对探测器二维电子气电子迁移率的影响。仿真结果显示,提高二维电子气的电子面密度浓度和适当增大Al组分,并降低工作温度,有助于探测器获得更高的二维电子气电子迁移率。A quantum-dots field effect single photon detector based on the field effect transistor was designed.Two-dimensional electron gas scattering model of electron mobility is built based on the two-dimensional relaxation time approximation theory.By solving the GaAs/AlxGa1-xAs 2DEG system＇s electron and phonon interactional Hamiltonian function of the quantum dots field effect of single photon detector,the effects on the electronic mobility of 2DEG of the operation of the lattice vibration scattering in the condition of various temperature,various A1 component and various 2DEG electronic mobility were obtained.The simulation results show that improving the surface density of electron of 2DEG concentration,appropriately increasing Al components and reducing the working temperature is benefit to probe for higher 2DEG electron mobility.

关 键 词：单光子探测器 电子迁移率 量子点 

分 类 号：TL814[核科学技术—核技术及应用]