Advances and prospects in nitrides based light-emitting-diodes  

作　　者：李晋闽 刘喆 刘志强 闫建昌 魏同波 伊晓燕 王军喜 

机构地区：[1]Research and Development Center for Solid State Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]State Key Laboratory of Solid State Lighting,Beijing 100083,China [3]Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application,geijing 100083,China

出　　处：《Journal of Semiconductors》2016年第6期1-14,共14页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2013AA03A101)

摘　　要：Due to their low power consumption,long lifetime and high efficiency,nitrides based white lightemitting-diodes（LEDs） have long been considered to be a promising technology for next generation illumination.In this work,we provide a brief review of the development of GaN based LEDs.Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented.We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-statelighting.Due to their low power consumption,long lifetime and high efficiency,nitrides based white lightemitting-diodes（LEDs） have long been considered to be a promising technology for next generation illumination.In this work,we provide a brief review of the development of GaN based LEDs.Some pioneering and significant experiment results of our group and the overview of the recent progress in this field are presented.We hope it can provide some meaningful information for the development of high efficiency GaN based LEDs and solid-statelighting.

关 键 词：nitrides light-emitting-diodes MOCVD multiple-quantum-well p-doping 

分 类 号：TN312.8[电子电信—物理电子学] TN304.23