Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD  

作　　者：闫果果 张峰 钮应喜 杨霏 刘兴昉 王雷 赵万顺 孙国胜 曾一平 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China [3]State Grid Smart Grid Research Institute,Beijing 100192,China [4]Dongguan Tianyu Semiconductor,Inc.,Dongguan 523000,China

出　　处：《Journal of Semiconductors》2016年第6期15-20,共6页半导体学报（英文版）

基　　金：supported by the National High Technology R&D Program of China(No.2014AA041402);the National Natural Science Foundation of China(Nos.61474113,61274007,61574140);the Beijing Natural Science Foundation of China(Nos.4132076,4132074);the Program of State Grid Smart Grid Research Institute(No.SGRI-WD-71-14-004);the Youth Innovation Promotion Association of CAS

摘　　要：Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition（CVD） system using H2-SiH4-C2H4-HCl.The effect of the SiH_4/H_2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively.The growth rate increase in proportion to the SiH_4/H_2 ratio and the influence mechanism of chlorine has been investigated.With the reactor pressure increasing from 40 to 100 Torr,the growth rate increased to 52μm/h and then decreased to 47 μm/h,which is due to the joint effect of H_2 and HC1 etching as well as the formation of Si clusters at higher reactor pressure.The surface root mean square（RMS） roughness keeps around 1 nm with the growth rate increasing to 49 μm/h.The scanning electron microscope（SEM）,Raman spectroscopy and X-ray diffraction（XRD） demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved.These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy.Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition（CVD） system using H2-SiH4-C2H4-HCl.The effect of the SiH_4/H_2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively.The growth rate increase in proportion to the SiH_4/H_2 ratio and the influence mechanism of chlorine has been investigated.With the reactor pressure increasing from 40 to 100 Torr,the growth rate increased to 52μm/h and then decreased to 47 μm/h,which is due to the joint effect of H_2 and HC1 etching as well as the formation of Si clusters at higher reactor pressure.The surface root mean square（RMS） roughness keeps around 1 nm with the growth rate increasing to 49 μm/h.The scanning electron microscope（SEM）,Raman spectroscopy and X-ray diffraction（XRD） demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved.These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy.

关 键 词：4H-SiC epilayer chemical vapor deposition homoepitaxial growth growth rate 

分 类 号：TN304.054[电子电信—物理电子学]