Cubic AlN thin film formation on quartz substrate by pulse laser deposition  

作　　者：郑必举 胡文 

机构地区：[1]Faculty of Materials Science and Engineering, Kunming University of Science and Technology

出　　处：《Journal of Semiconductors》2016年第6期27-32,共6页半导体学报（英文版）

基　　金：supported by the Yunnan Provincial Natural of Science Foundation of China(No.KKSY201251089)

摘　　要：Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere.A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source.In order to study the influence of the process parameters on the deposited AlN film,the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm^2,substrate temperature from room temperature to 800℃and nitrogen pressure from 0.1 to 50 Pa.X-ray diffraction,scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films.It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature600-800 ℃,nitrogen pressure 10-0.1 Pa and a moderate laser energy density（190 J/cm^2）.The high quality AlN film exhibited good optical property.Cubic AlN thin films were obtained on quartz substrate by pulse laser deposition in a nitrogen reactive atmosphere.A Nd-YAG laser with a wavelength of 1064 nm was used as the laser source.In order to study the influence of the process parameters on the deposited AlN film,the experiments were performed at various technique parameters of laser energy density from 70 to 260 J/cm^2,substrate temperature from room temperature to 800℃and nitrogen pressure from 0.1 to 50 Pa.X-ray diffraction,scanning electron microscopy and X-ray photoelectron spectroscopy were applied to characterize the structure and surface morphology of the deposited AlN films.It was found that the structure of AlN films deposited in a vacuum is rocksalt under the condition of substrate temperature600-800 ℃,nitrogen pressure 10-0.1 Pa and a moderate laser energy density（190 J/cm^2）.The high quality AlN film exhibited good optical property.

关 键 词：AlN thin film pulsed laser deposition XPS 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN249[电子电信—物理电子学]