Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method  

作　　者：文静 文玉梅 李平 王三山 

机构地区：[1]Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University

出　　处：《Journal of Semiconductors》2016年第6期97-100,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61006053)

摘　　要：This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method.The peak wavelength shift of LEDs is due to the energy band gap shrinking.The temperature dependence of the bandgap of AlGalnP LEDs is derived from those of the underlying binary compounds A1 P,GaP,and InP.Based on this,a theoretical model for the dependence of the peak wavelength on junction temperature is developed.Experimental results on the junction temperature of AlGalnP red light-emitting diodes are presented.Excellent agreement between the theoretical and experimental temperature dependence of the peak wavelength is found.This study proposes a practical method to estimate the junction temperature of AlGaInP LEDs using the luminescence spectra method.The peak wavelength shift of LEDs is due to the energy band gap shrinking.The temperature dependence of the bandgap of AlGalnP LEDs is derived from those of the underlying binary compounds A1 P,GaP,and InP.Based on this,a theoretical model for the dependence of the peak wavelength on junction temperature is developed.Experimental results on the junction temperature of AlGalnP red light-emitting diodes are presented.Excellent agreement between the theoretical and experimental temperature dependence of the peak wavelength is found.

关 键 词：light emitting diode junction temperature luminescence bandgap 

分 类 号：TN312.8[电子电信—物理电子学] TN304.21