Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology  

作　　者：刘远 刘玉荣 何玉娟 李斌 恩云飞 方文啸 

机构地区：[1]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI [2]School of Electronic and Information Engineering, South China University of Technology

出　　处：《Journal of Semiconductors》2016年第6期106-111,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61574048,61204112);the Guangdong Natural Science Foundation(No.2014A030313656)

摘　　要：Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.

关 键 词：MOSFET low-frequency noise carrier number fluctuation carrier mobility fluctuation 

分 类 号：TN386[电子电信—物理电子学]