A superjunction structure using high-k insulator for power devices:theory and optimization  

作　　者：黄铭敏 陈星弼 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2016年第6期116-121,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.51237001)

摘　　要：A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculation results show that,only needing an Hk insulator with a permittivity of ε_I=5ε_S,the optimum specific on-resistance of the MOSFET applying the proposed structure is about 8%-20%lower than that of the conventional SJ-MOSFET with V_B = 200-1000 V.An example with V_B = 400 V shows that,the permissible error range of doping concentration of the p-region to maintain above 80%of V_B is from —37%to ＋32%for the former and is only from-13%to ＋13%for the latter.A superjunction（SJ） structure using a high-k（Hk） insulator is studied and optimized by using an analytic model.Results by using the proposed model match well with that of numerical calculations.Numerical calculation results show that,only needing an Hk insulator with a permittivity of ε_I=5ε_S,the optimum specific on-resistance of the MOSFET applying the proposed structure is about 8%-20%lower than that of the conventional SJ-MOSFET with V_B = 200-1000 V.An example with V_B = 400 V shows that,the permissible error range of doping concentration of the p-region to maintain above 80%of V_B is from —37%to ＋32%for the former and is only from-13%to ＋13%for the latter.

关 键 词：high-k（Hk） superjunction MOSFET specific on-resistance charge imbalance 

分 类 号：TN386[电子电信—物理电子学]