Total dose responses and reliability issues of 65 nm NMOSFETs  

作　　者：余德昭 郑齐文 崔江维 周航 余学峰 郭旗 

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China [2]Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China [3]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2016年第6期129-135,共7页半导体学报（英文版）

基　　金：supported by“Light of West China”Program of CAS(No.XBBS201219)

摘　　要：In this paper,total dose responses and reliability issues of MOSFETs fabricated by 65 nm CMOS technology were examined. ＂Radiation-induced narrow channel effect＂ is observed in a narrow channel device.Similar to total dose responses of NMOSFETs,narrow channel NMOSFEs have larger hot-carrier-induced degradation than wide channel devices.Step Time-Dependent Dielectric Breakdown（TDDB） stresses are applied,and narrow channel devices have higher breakdown voltage than wide channel devices,which agree with ＂weakest link＂ theory of TDDB.Experimental results show that linear current,transconductance,saturated drain current and subthreshold swing are superposed degenerated by total dose irradiation and reliability issues,which may result in different lifetime from that considering total dose irradiation reliability issues separately.In this paper,total dose responses and reliability issues of MOSFETs fabricated by 65 nm CMOS technology were examined. ＂Radiation-induced narrow channel effect＂ is observed in a narrow channel device.Similar to total dose responses of NMOSFETs,narrow channel NMOSFEs have larger hot-carrier-induced degradation than wide channel devices.Step Time-Dependent Dielectric Breakdown（TDDB） stresses are applied,and narrow channel devices have higher breakdown voltage than wide channel devices,which agree with ＂weakest link＂ theory of TDDB.Experimental results show that linear current,transconductance,saturated drain current and subthreshold swing are superposed degenerated by total dose irradiation and reliability issues,which may result in different lifetime from that considering total dose irradiation reliability issues separately.

关 键 词：total dose responses reliability lifetime 

分 类 号：TN386[电子电信—物理电子学] TP333.7[自动化与计算机技术—计算机系统结构]