Analytical Descriptions of Magnetic Properties and Magnetoresistance in n-Type HgCr_2Se_4  

作　　者：林朝镜 石友国 李永庆 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2016年第7期157-160,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61425015,11474330 and 11374337;the National Basic Research Program of China under Grant Nos 2012CB921703 and 2015CB921102;the Chinese Academy of Sciences

摘　　要：We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling laws for a narrow range of temperatures near the critical point, two methods with connections to the renormalization group theory provide analytical descriptions of the magnetic properties for much wider temperature ranges. Based on this, an analytical formula is obtained for the temperature dependence of the low field magnetoresistance in the paramagnetic phase.We present a detailed investigation of magnetic properties of colossal magnetoresistance material HgCr2Se4. While spontaneous magnetization and zero-field magnetic susceptibility are found to follow asymptotic scaling laws for a narrow range of temperatures near the critical point, two methods with connections to the renormalization group theory provide analytical descriptions of the magnetic properties for much wider temperature ranges. Based on this, an analytical formula is obtained for the temperature dependence of the low field magnetoresistance in the paramagnetic phase.

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分 类 号：TM271[一般工业技术—材料科学与工程]