门电压对并联非对称耦合双量子点系统输运性质影响  

Effect of Gate Voltage on Transport Properties of Asymmetrical- coupled Double Quantum Dots

作　　者：廖艳华[1] 水开 

机构地区：[1]湖北理工学院数理学院,湖北黄石435003

出　　处：《湖北理工学院学报》2016年第3期42-45,51,共5页Journal of Hubei Polytechnic University

基　　金：湖北理工学院教学改革研究项目(项目编号:2015B09);湖北理工学院实验室开放基金项目

摘　　要：采用数值重整化群方法,研究了与导线并联非对称耦合的双量子点系统的输运性质。研究表明:通过改变与导线强耦合的量子点1(QD1)的能级,就能改变量子点中电子的占有数,影响系统的输运性质;且当导线与量子点2(QD2))间弱耦合强度较弱时,系统电导随着与导线强耦合的量子点的能量增加而呈现单调减小;但随着弱耦合强度的增加,系统电导随着强耦合量子点的能级增加会出现先减小后增加的凹槽形。By using the numerical renormalization group method,the transport properties in double quantum dots asymmetrically coupled to leads were studied. The results shows that by tuning the energy level of QD1（ ∈1） the electron numbers in QD1 can be controlled and transport properties of the system will be influenced. When the weak coupling strength between conductor and Quantum Dots 2（ QD2） is relatively weak,with the increase of the energy level of QD1,it is found that the conductance decreases monotonously; However; With the growth of weak coupling strength,the conductance shows a dip structure near ∈1 = 0.

关 键 词：数值重整化群 强关联系统 量子点 门电压 

分 类 号：O552.6[理学—热学与物质分子运动论]