Enhancement of Magnetoelectric Properties in A Surface-Mount Magnetoelectric Device  

作　　者：LI Jun ZHANG Yuan LI Yingwei ZHU Yongdan JIANG Renhui LI Meiya 

机构地区：[1]School of Physics and Technology, and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education,Wuhan University [2]Department of Engineering Mechanics, School of Civil Engineering, Wuhan University [3]School of Information Engineer, Hubei University for Nationalities

出　　处：《Wuhan University Journal of Natural Sciences》2016年第4期333-338,共6页武汉大学学报（自然科学英文版）

基　　金：Supported by the National Natural Science Foundation of China(51372174,51132001,11364018 and J1210061);the Natural Science Foundation of Hubei Province(2014CFB610);the Excellent Young Innovation Team Project of Hubei Province(T201429)

摘　　要：The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on the same side of a magnetostrictive material Metglas, forming a novel two PZT in-series device. ME voltage obtained from the two PZT in-series is obviously higher than that of single PZT in a magnetic field with certain value. The ME voltage coefficient（αV） of the surface-mount ME device is significantly enhanced by adjusting the thickness of Metglas： 1） At a frequency of 1 k Hz, αV of this device increases with the layer number of Metglas increased, and the maximum value of αV is about 4.25 times than the minimum; 2） At a frequency of 5 k Hz, the maximum value of αV is 458 mV /Oe, which derives from the ME device with three layers Metglas. This novel design provides an effective way to manufacture miniature and high sensitive ME devices, which makes it possible to apply ME device into integrated circuit（IC）.The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on the same side of a magnetostrictive material Metglas, forming a novel two PZT in-series device. ME voltage obtained from the two PZT in-series is obviously higher than that of single PZT in a magnetic field with certain value. The ME voltage coefficient（αV） of the surface-mount ME device is significantly enhanced by adjusting the thickness of Metglas： 1） At a frequency of 1 k Hz, αV of this device increases with the layer number of Metglas increased, and the maximum value of αV is about 4.25 times than the minimum; 2） At a frequency of 5 k Hz, the maximum value of αV is 458 mV /Oe, which derives from the ME device with three layers Metglas. This novel design provides an effective way to manufacture miniature and high sensitive ME devices, which makes it possible to apply ME device into integrated circuit（IC）.

关 键 词：magnetoelectric composite system surface-mount device magnetoelectric voltage coefficient PZT/Metglas 

分 类 号：O469[理学—凝聚态物理]