Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs：A new candidate of host material of diluted magnetic semiconductors  

作　　者：陈碧娟 邓正 望贤成 冯少敏 袁真 张思佳 刘清青 靳常青 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

出　　处：《Chinese Physics B》2016年第7期71-75,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China;Project of Ministry of Science and Technology of China

摘　　要：The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized.Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor.The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized.Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor.

关 键 词：diluted magnetic semiconductor ZrCuSiAs-type structure high pressure 

分 类 号：O482.5[理学—固体物理]