Influence of nitrogen and magnesium doping on the properties of ZnO films  

作　　者：李东华 王惠琼 周华 李亚平 黄政 郑金成 王嘉鸥 钱海杰 奎热西 陈晓航 詹华瀚 周颖慧 康俊勇 

机构地区：[1]Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China [2]Xiamen University Malaysia Campus, Sepang, Selangor 439000, Malaysia [3]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China [4]Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Chinese Physics B》2016年第7期331-335,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11204253,U1332105,61227009,and 91321102);the Fundamental Research Funds for Central Universities,China(Grant No.20720160020);the National High Technology Research and Development Program of China(Grant No.2014AA052202)

摘　　要：Undoped ZnO and doped ZnO films were deposited on the MgO（111） substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction（XRD）. The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations.It is found that, nitrogen doping would hinder the growth of thin film, and generate the NOdefect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting（N_2）Oproduction and increasing nitrogen content.Undoped ZnO and doped ZnO films were deposited on the MgO（111） substrates using oxygen plasma-assisted molecular beam expitaxy. The orientations of the grown ZnO thin film were investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction（XRD）. The film roughness was measured by atomic force microscopy, which was correlated with the grain sizes determined by XRD. Synchrotron-based x-ray absorption spectroscopy was performed to study the doping effect on the electronic properties of the ZnO films, compared with density functional theory calculations.It is found that, nitrogen doping would hinder the growth of thin film, and generate the NOdefect, while magnesium doping promotes the quality of nitrogen-doped ZnO films, inhibiting（N_2）Oproduction and increasing nitrogen content.

关 键 词：ZnO nitrogen magnesium x-ray absorption spectra 

分 类 号：O484.4[理学—固体物理]