Thermally induced native defect transform in annealed GaSb  

作　　者：苏杰 刘彤 刘京明 杨俊 白永彪 沈桂英 董志远 王芳芳 赵有文 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

出　　处：《Chinese Physics B》2016年第7期450-454,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61474104 and 61504131)

摘　　要：Undoped p-type Ga Sb single crystals were annealed at 550–600℃ for 100 h in ambient antimony. The annealed Ga Sb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy（GDMS）, infrared（IR）optical transmission and photoluminescence（PL） spectroscopy. Compared with the as-grown Ga Sb single crystal, the annealed Ga Sb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the Ga Sb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed.Undoped p-type Ga Sb single crystals were annealed at 550–600℃ for 100 h in ambient antimony. The annealed Ga Sb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy（GDMS）, infrared（IR）optical transmission and photoluminescence（PL） spectroscopy. Compared with the as-grown Ga Sb single crystal, the annealed Ga Sb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the Ga Sb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed.

关 键 词：GaSb annealing defect Hall effect measurement 

分 类 号：TN304[电子电信—物理电子学]