Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices  

作　　者：解冰清 李博 毕津顺 卜建辉 吴驰 李彬鸿 韩郑生 罗家俊 

机构地区：[1]Key Laboratory of Silicon Device and Technology, Institute of Microelectronics, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2016年第7期546-552,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61176095 and 61404169);the Youth Innovation Promotion Association of Chinese Academy of Sciences

摘　　要：The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator（SOI） metaloxide-silicon（MOS） field-effect-transistors（FETs） were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator（SOI） metaloxide-silicon（MOS） field-effect-transistors（FETs） were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.

关 键 词：cryogenic temperature metal-oxide-semiconductor silicon-on-insulator capacitance 

分 类 号：TN386[电子电信—物理电子学] TN304.12