ZrO_2纳米粒子薄膜阻变特性研究  

Resistive switching of ZrO_2 nanoparticle thin films

作　　者：李润霞[1] 李建昌[1] 

机构地区：[1]东北大学机械工程与自动化学院真空与流体工程研究中心,辽宁沈阳110819

出　　处：《真空》2016年第3期26-29,共4页Vacuum

摘　　要：用水热法制备了ZrO_2纳米粒子,结构通过XRD表征,利用GaIn上电极对旋涂于ITO基底上薄膜进行伏安特性测试。结果表明,ZrO_2纳米粒子为微晶单斜相,随水热温度增加,结晶度增强。器件具有双极阻变特性,开关比随水热温度增加而减小,阈值电压则近乎线性增加。样品低阻态输运为欧姆特性,而高阻态符合空间电荷限制导电机制,阻变机理为氧空位导电细丝的形成与断裂。The ZrO_2 nanoparticles were fabricated using hydrothermal method and characterized with X- ray diffraction. The current voltage characteristics of films spin- coated on indium- tin- oxides were measured with the Ga In top electrode. The ZrO_2 nanoparticles are monoclinic phase, and its crystallinity enhances with the increasing of hydrothermal temperature. The films exhibit excellent bipolar resistive switching behavior. The threshold voltage linearly increases with the hydrothermal temperature,while the on- off ratio shows reserved trend. The charge transport for low and high resistance states are dominated by the Ohmic and the space charge limited conduction mechanism, respectively. The switching mechanism can be ascribed to the formation and rupture of the conductive filament of oxygen vacancies.

关 键 词：ZrO_2纳米粒子 阻变 水热法 氧空位 

分 类 号：TQ174[化学工程—陶瓷工业]