15V/400V高低压兼容的栅驱动器设计技术  

Design Technology of Gate Driver With Compatible 15V/400V Voltage

作　　者：唐宁[1] 代雪峰[2] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032 [2]东北大学理学院物理系,沈阳110004

出　　处：《微处理机》2016年第3期20-22,共3页Microprocessors

摘　　要：描述了一种15V/400V高低压兼容的功率MOSFET栅驱动器电路设计。电路内部有三组电源提供供电,逻辑电源供给端口信号输入,低侧通路电源供给低侧端口信号输出,高侧通路电源供给高侧端口输出。片上三组非隔离电源通过从输入部分到低侧通路输出部分、高侧通路输出部分的独立供给,实现传输信号的电平转换。采用介质隔离的工艺技术,解决三组电源的高低压兼容问题。因而,设计重点更多的是聚焦在驱动器内部核心单元高低压转换电路,通过设计分析和仿真验证,实现了高侧通路输出信号相对于输入信号产生400V的电压偏移,低侧通路输出信号与输入信号同步输出。最终,基于XFAB公司的1.0μm工艺线对器件进行加工制造,测试结果显示最高偏移电压达到400V,导通延迟时间为120ns,关断延迟时间为94ns。The paper presents the circuit design of power MOSFET gate driver,which can realize compatible high / low voltage transistors in the same chip. Three groups of supply voltage,the logic supply voltage for input port,the low side supply voltage for low side output port and the high side supply voltage for high side output port,supply separately for input port,low side output port and high side output port,and realize level shift of signal transmission. The paper,adopting dielectric isolation process technology,resolves the high- and- low voltage compatible problem on the three power groups. Thereby,the point is focused on the structural design of high / low voltage level shifter as the core block in the circuit. By design analysis and simulate verification,the circuit can realize 400 V voltage offset of the high side output signal relative to input signal and synchronization of the low side output signal relative to the input signal. Finally,based on the XFAB 1. 0μm process to fabricate,the test results show that the highest offset voltage is 400 V,the turn- on delay is 120 ns,and the turn- off delay is 94 ns.

关 键 词：栅驱动器 低侧 高侧 高低压 兼容 偏移 

分 类 号：TN4[电子电信—微电子学与固体电子学]