Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition  

作　　者：李东玲 冯小飞 温志渝 尚正国 佘引 

机构地区：[1]National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400030, China [2]Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, Chongqing University, Chongqing 400030, China [3]No.24 Reaearch Institute of China Electronics Technology Group Corporation, Chongqing 400060, China

出　　处：《Optoelectronics Letters》2016年第4期285-289,共5页光电子快报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2015AA042603);the Fundamental Research Funds for the Central Universities of China(No.106112014CDJZR160001)

摘　　要：Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.

关 键 词：DEPOSITION Deposition rates Integrated circuits MEMS Nitrides Optical properties Plasma CVD Refractive index Silicon nitride Stresses Vapor deposition 

分 类 号：TN304.24[电子电信—物理电子学]