放电等离子烧结镓掺杂氧化锌陶瓷及其电学特性研究  

Preparation and Electrical Properties of Ga Doped ZnO Ceramics by Spark Plasma Sintering

作　　者：陈龙[1] 王越[1] 梅晓平 胡烁鹏 蒋毅坚[2] 

机构地区：[1]北京工业大学应用数理学院,北京100124 [2]北京工业大学激光工程研究院,北京100124

出　　处：《人工晶体学报》2016年第6期1544-1548,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11374031)

摘　　要：采用放电等离子烧结（SPS）方法烧结出了致密的掺镓氧化锌陶瓷（0.075wt%GZO）。样品的烧结温度为950-1200℃,烧结时间为3-21 min,并对样品的物相、断口形貌、电学性能以及密度进行了测试和分析。结果表明,烧结条件对GZO的晶体结构没有影响,但是对样品的密度、晶粒尺寸、电阻率等性质有一定的影响。综合分析上述结果可得到用SPS方法烧结GZO陶瓷的最佳烧结工艺是烧结温度1100℃,烧结时间9 min。Bulk gallium-doped zinc oxide ceramics（ 0. 075wt% GZO） which has a near full density were fabricated by spark plasma sintering process. The sintering temperature of the specimens from 950 ℃ to1200 ℃ and sintering time from 3 min to 21 min. The phase,fractured morphology,electrical properties and density of samples were investigated. The results indicate that the crystal structure of zinc oxide doesn＇t change with the change of sintering conditions,but it impacts on the density,grain growth and resistivity of GZO ceramics. All experiments results reveal that sintering temperature of 1100 ℃ and sintering time of 9 min are the optimal sintering conditions of GZO ceramics.

关 键 词：掺镓氧化锌陶瓷 放电等离子烧结 烧结温度 烧结时间 

分 类 号：TQ174[化学工程—陶瓷工业]