不同表面复合速率情况下IBC太阳电池发射区半宽度研究  

Emitter Half Width of IBC Solar Cell under Different Surface Recombination Velocity

作　　者：周涛[1] 陆晓东[1] 吴元庆[1] 李媛[1] 

机构地区：[1]渤海大学新能源学院,锦州121000

出　　处：《硅酸盐通报》2016年第6期1688-1692,1698,共6页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金项目(11304020)

摘　　要：利用TCAD半导体器件仿真软件对N型插指背接触（Interdigitated Back Contact,IBC）单晶硅太阳电池发射区半宽度进行研究,全面系统地分析了在不同背表面复合速率的情况下,发射区半宽度对IBC太阳电池短路电流密度（JSC）、开路电压（VOC）、填充因子（FF）及转换效率（Eff）的影响。结果表明：随着背表面复合速率的增大,对于不同发射区半宽度的情况,IBC太阳电池JSC、VOC、FF及Eff均显著降低。当背表面复合速率一定时,发射区半宽度越大,JSC、VOC越高,而FF越低。随着发射区半宽度的增大,IBC太阳电池Eff呈现先增大后减小的变化特点。当背表面复合速率较小（50~500 cm/s）时,最优的发射区半宽度为800μm。当背表面复合速率较高（≥5000 cm/s）时,最优的发射区半宽度为1200μm。The emitter half width of n-Type Interdigitated Back Contact mon O-crystalline silicon solar cell are studied by using TCAD semiconductor device simulation software.The influences of emitter half width on IBC solar cell ＇s short-circuit current density,open-circuit voltage,filling factor and conversion efficiency under different back surface recombination velocity are studied comprehensively and systematically.The research shows that the IBC solar cell＇s short-circuit current density,open-circuit voltage,filling factor and conversion efficiency were significantly reduced with the increasing of the back surface recombination velocity.Along,in the case of different emitter half width.When the back surface recombination velocity is constant,the longer the emitter half width,the greater theshort-circuit current density,the higher the open-circuit voltage,the lower the filling factor.The IBC solar cell Eff first increases then decreases with the increasing of the emitter half width.When the back surface recombination velocity is smaller（50-500 cm/s）,the optimal emitter half width is 800 μm.When the back surface recombination velocity is greater（≥5000 cm/s）,the optimal emitter half width is 1200 μm.

关 键 词：背接触 太阳电池 发射区 半宽度 表面复合速度 

分 类 号：TM914.4[电气工程—电力电子与电力传动]