Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate  

作　　者：WEI Jingting ZHANG Baijun WANG Gang 

机构地区：[1]Guangdong Polytechnic Institute [2]The Open University of Guangdong [3]School of Microelectronics,State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University

出　　处：《Chinese Journal of Electronics》2016年第4期672-677,共6页电子学报（英文版）

基　　金：supported by Research Program of The Open University of Guangdong(No.1318);the National Natural Science Foundation of China(No.61274039);International Sci.& Tech.Collaboration Program of Guangdong Province,China(No.2013B051000041)

摘　　要：The optimal design of Ga N-based Lightemitting diode(LED) is important for its reliability.In this work,a new three-Dimensional(3D) circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting Ga Nbased LED grown on Si(111) substrate with different structures and electrode patterns.It consists of resistance of Transparent conductive layer(TCL),resistance of epitaxial layer,intrinsic diodes presenting the active layer,and Al N/Si junction as which the multilayer of Al N/Si is assumed.Simulations results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED structure.Furthermore,the experimentally measured light emission uniformity agrees well with simulation results.The electrical and optical characteristics of LED are obviously affected by the current distribution uniformity.The optimal design of Ga N-based Lightemitting diode（LED） is important for its reliability.In this work,a new three-Dimensional（3D） circuit model with a resistor network is developed to study the current distribution in the active layer of vertical conducting Ga Nbased LED grown on Si（111） substrate with different structures and electrode patterns.It consists of resistance of Transparent conductive layer（TCL）,resistance of epitaxial layer,intrinsic diodes presenting the active layer,and Al N/Si junction as which the multilayer of Al N/Si is assumed.Simulations results of current distribution in active layers of two kinds of LED structures show that current distribution uniformity is greatly affected by the electrode pattern and the LED structure.Furthermore,the experimentally measured light emission uniformity agrees well with simulation results.The electrical and optical characteristics of LED are obviously affected by the current distribution uniformity.

关 键 词：Light-emitting diodes Current distribution uniformity Circuit model 

分 类 号：TN312.8[电子电信—物理电子学] O613.72[理学—无机化学]