热处理在金刚石表面热蒸镀覆SiO_2/SiC晶体复合涂层  

Preparation of SiO_2/SiC crystalline composite coating on surface of diamond by thermal evaporation method

作　　者：梁宝岩[1] 张旺玺[1] 王艳芝[1] 徐世帅[1] 闫帅帅[1] 王俊和[1] 穆云超[1] 

机构地区：[1]中原工学院材料与化工学院,河南郑州450007

出　　处：《材料热处理学报》2016年第7期180-184,共5页Transactions of Materials and Heat Treatment

基　　金：河南省教育厅重点项目(13A430132;151RTSTHN004);河南省教育厅自然科学研究计划(12A430024;13A430128;14A430007);河南省基础与前沿技术研究计划(132300410164);河南省省院科技合作项目(122106000051;142106000193);河南省科技开放合作项目(142106000051)

摘　　要：采用高温热蒸镀方法处理在金刚石表面镀覆上了SiO_2/SiC晶粒复合涂层,同时研究了热处理温度和Al助剂对金刚石表面形成SiO_2/SiC晶粒复合涂层的影响。研究结果表明,在较低温度(1400℃),金刚石表面形成许多SiC和SiO_2和SiC颗粒。当温度升高到1450℃时,金刚石表面镀覆了良好的SiO_2/SiC复合涂层,形成了许多SiO_2和SiC颗粒、微米棒与晶须。Si粉中添加适量的Al(5 mass%)就会促进Si的蒸发,在1400℃时金刚石表面就会形成大量的SiO_2和SiC颗粒、微米棒与晶须。The SiOJSiC composite coatings were prepared on the surface of diamond by thermal evaporation method. Effect of A1 on the formation of the SiO2/ SiC composite coatings on diamond was also studied. The result shows that SiC and SiO2 grains are formed on the surface of diamond at lower temperature （ 1400 ℃ ）. When the thermal evaporation temperature reaches 1450 ℃, many SiO2 grains, micron rods and whiskers are formed on the diamond. Adding 5mass% A1 in the Si powders promotes the vaporing of Si, and a large amount of SiO2 grains, micron rods and whiskers is observed on the surface of the diamond treated at 1400 ℃.

关 键 词：热镀覆处理 金刚石 二氧化硅/碳化硅复合涂层晶体 铝 

分 类 号：TG174.44[金属学及工艺—金属表面处理]