微型化钴基薄带中的巨磁阻抗效应  

Giant Magnetoimpedance Effect in Micro-Patterned Co-Based Ribbons

作　　者：樊天麒 杨真[1] 雷冲[1] 周勇[1] 

机构地区：[1]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《微纳电子技术》2016年第8期515-519,534,共6页Micronanoelectronic Technology

基　　金：中国国家自然科学基金资助项目(61273065);国家科技支撑计划资助项目(2012BAK08B05);上海市自然科学基金资助项目(13ZR1420800);上海交通大学Agri-X基金资助项目(Agri-X2015005);上海交通大学航天先进技术联合研究中心技术创新项目(USCAST2015-2);航天支撑技术基金资助项目(15GFZ-JJ02-05)

摘　　要：采用键合、光刻和电镀等微机电系统(MEMS)微细加工技术制备了不同结构的微型化Co基薄带。微型化Co基非晶薄带采用VACUUMSHMELZE公司生产的VC6025Z型材料,其结构设计为曲折型不同匝数(1~3匝)。在1~40 MHz频率内,研究了外加磁场的方向以及传感器的匝数对巨磁阻抗(GMI)效应的影响。研究发现,巨磁阻抗效应均呈现负值,这与材料本身具有较大的矫顽力这一属性有关。与外加横向磁场时的GMI效应相比,当外加磁场为纵向时,获得较大的巨磁阻抗效应负值。在电流频率为10 MHz、磁场强度120 Oe(1 A·m-1=4π×10-3 Oe)时,巨磁阻抗变化率达到最大值-64.2%。随着匝数的增加,巨磁阻抗变化率的最大值由1匝的-31.2%增加到3匝的-64.2%。GMI效应均有相同的变化趋势,随磁场强度的增加而降低,在某一磁场下达到负的最大值。The micro Co-based amorphous ribbons with different structures were fabricated by the micro-electromechanical system（MEMS）microfabrication technology,including the bonding,lithography and electroplating.The micro Co-based amorphous ribbons were fabricated with the commercial amorphous ribbons（VC6025Z）purchased from VACUUMSHMELZE company.The structure of the micro ribbons was designed in the meander shape with different turns（1-3 turns）.The effects of the orientation of the external magnetic field and the turns of the sensor on the giant magnetoimpedance（GMI）effect were studied in the frequency range of 1-40 MHz.It is found that all the GMI effect is negative,which is related with the material property,namely a large coercive force.Compared with the GMI effect obtained at the transverse external magnetic field,the negative GMI ratio obtained at the longitudinal external magnetic field is higher.The maximum variation ratio of-64.2% for the GMI was obtained at the current frequency of10 MHz and the magnetic field intensity of 120 Oe（1 A·m^（-1）=4π×10-3 Oe）.With the increase of the number of turns,the maximum negative ratio of the GMI effect increases from-31.2%for one turn sample to-64.2% for the sample with three turns.The GMI effect has the same change trend,decreases with the increase of the magnetic field intensity,and reaches the negative maximum at a certain value of the magnetic field intensity.

关 键 词：微电子机械系统(MEMS) Co基薄带 巨磁阻抗(GMI)效应 外加磁场 匝数 

分 类 号：TH703[机械工程—仪器科学与技术]