反应温度对Cu_2ZnSnS_4半导体薄膜形貌和性能的影响  

Effect of the Reaction Temperature on the Morphology and Properties of Cu_2ZnSnS_4 Semiconductor Thin Films

在线阅读下载全文

作  者:熊辉[1] 魏爱香[1] 刘俊[1] 招瑜[1] 

机构地区:[1]广东工业大学材料与能源学院,广州510006

出  处:《微纳电子技术》2016年第8期547-551,共5页Micronanoelectronic Technology

基  金:国家自然科学基金资助项目(51202037);广东省高等学校优秀青年教师培养计划(YQ2015055)

摘  要:采用溶剂热合成技术,以乙醇为溶剂,以氯化锌、氯化亚锡、氯化铜和硫脲为反应剂,以草酸为还原剂,以十六烷基三甲基溴化铵为阳离子表面活性剂,直接在透明导电玻璃(FTO)衬底上制备Cu_2ZnSnS_4(CZTS)半导体纳米晶薄膜。采用X射线衍射(XRD)、喇曼光谱、透射电镜(TEM)、扫描电子显微镜(SEM)和紫外-可见光谱研究了反应温度对CZTS纳米晶薄膜的形貌、结构和光学性能的影响规律。结果表明:CZTS纳米晶薄膜具有锌黄锡矿结构,当反应温度从140℃逐渐升高到230℃时,纳米晶的平均晶粒尺寸从4.25 nm逐渐增加到13.17 nm,禁带宽度从1.76 eV减小到1.53 eV;同时,低温下制备的CZTS薄膜由平均直径约450 nm的类球形颗粒组成,高温下制备的薄膜逐步演变成由相互卷绕的纳米纸构成。The Cu_2ZnSnS_4(CZTS)semiconductor nanocrystallite thin films were directly grown on the transparent conductive fluorine-doped tin oxide(FTO)substrates by the solvothermal synthesis with ethanol as the solvent,zinc(Ⅱ)chloride,tin(Ⅱ)chloride dehydrate,copper(Ⅱ)chloride dehydrate and thiourea as the reactants,oxalic acid as the reductant and hexadecyl trimethyl ammonium bromide as the cation surfactant.The effect of the reaction temperature on the morphology,structure and optical property of the CZTS thin films was studied using the X-ray diffraction(XRD),Raman spectrum,transmission electron microscopy(TEM),scanning electron microscopy(SEM)and UV-VIS spectroscopy,respectively.The results show that the CZTS thin films are in kesterite phase.With the reaction temperature gradually increasing from140℃to 230℃,the average nanocrystallite size increases gradually from4.25 nm to 13.17 nm,and the optical band gap decreases from1.76 eV to 1.53 eV.Meanwhile,the CZTS thin films prepared at low temperature are composed of a large number of uniform sphere-like particles with an average diameter of about 450 nm,while the CZTS thin films prepared at high temperature are composed of a large number of nanosheets which interconnect with each other to form an entangled network-like architecture.

关 键 词:溶剂热法 Cu2ZnSnS4(CZTS)薄膜 反应温度 纳米颗粒 光学性能 

分 类 号:TB383[一般工业技术—材料科学与工程]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象