硅酸锌结晶釉定位析晶机理的研究  

Location Crystallization Mechanism of Zinc Silicate Crystalline Glaze

作　　者：宋来振 邵明梁[1] 张译文[1] 孔祥明[1] 张迎君[1] 何易龙 

机构地区：[1]济南大学材料科学与工程学院,济南250022

出　　处：《陶瓷》2016年第7期40-42,共3页Ceramics

摘　　要：笔者以ZnO为定位结晶剂,采用单一变量法在不同的烧成制度下制备结晶釉,并结合析晶动力学对晶体的生长规律和结晶机理进行了研究。结果表明：将釉料粒度控制在120-150目可以有效减少残留晶核的产生;同时将烧成温度控制在1 180-1 220℃,保温温度控制在1 080-1 115℃范围内,既有利于定位晶花的生长,又将最大程度扼制釉面非预定位置晶花的出现。In this paper, we take ZnO as the positioning and crystallization agent. The crystalline glaze was prepared under different sintering conditions by single variable method. Crystal growth and crystallization mechanism were studied through crystallization kinetics. The results showed that it can reduce the residual produce glaze crystal nucleus when the size of glaze is controlled at 120-150 mesh. When the firing temperature is controlled at 1 180 to 1 220 ℃ and the heat preservation temperature is controlled at 1 080 to 1 115 ℃. It is not only can helpful to the positioning of the crystal flower growth but also will greatly curb the glazed non crystal flower of the predetermined position.

关 键 词：结晶釉 定位析晶 析晶机理 

分 类 号：TQ174.4[化学工程—陶瓷工业]