HgCdTe光导探测器比探测率的特性分析  

Characteristic analysis on D* of HgCdTe photoconductive detector

作　　者：姚鹏[1] 王学奇[1] 王海晏[1] 段鹏程[1] 冯超[1] 

机构地区：[1]空军工程大学航空航天工程学院,陕西西安710038

出　　处：《激光与红外》2016年第7期838-842,共5页Laser & Infrared

摘　　要：从信号和噪声两个方面分析了HgCdTe光导探测器自身温度变化对比探测率D*的影响,并在理论层面上对比探测率的表达式进行了推导。理论分析表明:温度变化影响载流子的浓度和寿命,从而影响信号与噪声的大小,降低探测器的温度可使得探测器的比探测率得到一定程度的提高。通过MATLAB仿真,分析了组分和厚度的变化对Hg_(1-x)Cd_xTe光导器件的截止波长和峰值波长的影响情况,为使HgCdTe光导探测器在工作波段内有较高的探测响应,当探测器工作在某一温度,应选择合适的组分x和厚度d。The effects of temperature variation on D＊of HgCdTe photoconductive detector are analyzed from signal and noise,and the expression of D＊is deduced theoretically. Theoretical analysis shows that temperature change affects the concentration and lifetime of the carrier,which then has an influence on signal and noise,so D＊can be improved in some degree by reducing the temperature of the detector. Through MATLAB simulation,the influence of changes of component and thickness on cutoff wavelength and peak wavelength of Hg1-xCdxTe photoconductive detector are analyzed. In order to get a higher detection response of HgCdTe photoconductive detector in the working waveband,the appropriate component x and thickness d should be selected when the detector operates in a certain temperature.

关 键 词：光导型探测器 温度 比探测率 波长 HGCDTE 

分 类 号：TN214[电子电信—物理电子学]