一种小型化高线性GaN功放器设计  

Design of A Miniaturization GaN Power Amplifier with High Linearity

作　　者：李小春[1] 

机构地区：[1]中国电子科技集团公司第13研究所,石家庄050051

出　　处：《舰船电子对抗》2016年第3期118-120,共3页Shipboard Electronic Countermeasure

摘　　要：采用ADS软件对一种高线性GaN功率放大器进行匹配电路设计,并制作了一款超小尺寸的高线性放大电路。该电路采用0.254mm厚的Al_2O_3陶瓷作为基板,放大晶体管选用无封装芯片,在5mm×6mm的小尺寸范围内完成电路制作。制作的小尺寸高线性放大电路实现了在输入双音信号频率为4GHz和4.002GHz、输出总功率为2 W时,三阶互调抑制35dBc,功率附加效率35%。This paper uses ADS software to design a matching circuit for the GaN power amplifier with high linearity,and makes an ultra-mini amplifying circuit with high linearity.The circuit uses Al_2O_3 ceramic of 0.254 mm thickness as basic board,and the amplifying transistor selects the chip with no encapsulation,then the circuit is fabricated in small size of only 5mm×6mm.The fabricated small amplifying circuit with high linearity realizes：third-order intermodulation rejection is35 dBc and the power additional efficiency is 35% when the input two-tone signal frequencies are4 GHz and 4.002 GHz and the total output power is 2 W.

关 键 词：ADS软件 高线性 功率放大器 

分 类 号：TN722.75[电子电信—电路与系统]