铜铟镓硒薄膜电池激光刻线功率的优化研究  

Optimization Research on Laser Scribing Power of CIGS Thin Film Cell

作　　者：杨卫明[1] 吴美平[1] 王伟[1] 王丛笑[1] 

机构地区：[1]中国建材国际工程集团有限公司,上海200063

出　　处：《中国玻璃》2016年第3期3-6,共4页China Glass

摘　　要：铜铟镓硒薄膜电池的激光刻线工艺对电池的输出功率损失有较大影响。激光束能量的大小直接影响到第二道激光刻线（P2）沟槽中的前电板和底电极的接触电阻大小和电池的输出功率损失情况。建立了用于测试P2沟槽中接触电阻和输出功率损失的物理模型，并利用该模型研究了不同激光功率刻线后的P2沟槽输出功率损失，得到优化后的P2激光刻线功率为375mW。Laser scribing process of CIGS thin film cell has great influence on the output power loss of the cell. Energy of laser scribing beam directly affects the interconnection resistance and the cell output power loss of the front electrode and back electrode in scribing groove of the second laser scribing （P2） . A physical model which can test the interconnection resistance and output power losses in P2 groove is set up. Taking advantages of this physical model, this paper also researches the output power loss in P2 groove after different laser powers being scribed. The optimized P2 laser power is 375mW.

关 键 词：铜铟镓硒 第二道激光刻线功率 接触电阻 功率损失 

分 类 号：O613.52[理学—无机化学]