基于绝热演化通道的任意比特对称Dicke态的制备  

Symmetric Dicke States for Arbitrary Qubits by Adiabatic Passage

作　　者：李满仓[1] 李晓莉[1] 张小龙[1] 

机构地区：[1]重庆大学物理学院,重庆401331

出　　处：《吉首大学学报（自然科学版）》2016年第4期14-18,共5页Journal of Jishou University(Natural Sciences Edition)

基　　金：国家自然科学基金资助项目(11374375;11204389);重庆市自然科学基金资助项目(CSTC2012JJA00012)

摘　　要：根据绝热通道技术及暗态的演化机制,提出多个囚禁离子量子比特的纠缠Dicke态制备方案.该方案实现了处于激发状态的离子数连续可调,可完成任意对称Dicke态的制备.离子阱系统处于暗态,且能按照量子绝热演化进行,对试验参数的涨落不敏感.离子阱系统具有良好的屏蔽性,使离子几乎不受外界环境的影响,对离子比特的量子操作有更高的保真度.A scheme for realizing arbitrary symmetric Dicke states of multi-qubits via the adiabatic evolution for trapped ions is proposed.Leveraging on the adiabatic operation of dark states,the noise and randomness of moderate fluctuations in experimental parameters is not sensitive in this scheme.The encoded bits can be controlled very well in the cold ion trap.It is almost not affected by the influence of the external environment for quantum operations with higher fidelity.

关 键 词：量子绝热通道 对称Dicke态 暗态 离子阱 

分 类 号：O431[机械工程—光学工程]