IGBT模块键合线故障与门极杂散阻抗的关系研究  

Study on the relationship between bonding wire failure and the gate stray impedance of IGBT module

作　　者：陈红纳[1] 李志刚[1] 梅霜[1] 田盛[1] 

机构地区：[1]河北工业大学电气工程学院,天津300130

出　　处：《电子技术应用》2016年第8期56-59,66,共5页Application of Electronic Technique

基　　金：国家科技支撑计划(2015BAA09B01);国家自然科学基金资助项目(51377044);河北省科技计划项目(14214503D;13214303D)

摘　　要：键合线脱落是IGBT芯片一种普遍的失效形式,铝键合线故障在一定程度上会影响门极杂散阻抗。杂散阻抗的改变又会引起门极电信号的变化,因此通过门极测量信号的变化来表征其杂散阻抗的改变,进而判断IGBT芯片是否发生铝键合线脱落故障。对门极杂散阻抗与键合线故障之间的关系进行了研究,为识别IGBT模块铝键合线故障提供了依据。Bonding wire lift- off is a common failure mode, which will first affect the gate stray impedance. The changes of the gate stray impedance cause changes in the signals of the gate, which can be characterized by signals of the gate, and then determine whether there IGBT chip aluminum bonding wire lift- off or not. In this paper, the relationship between bonding wire failure and the gate stray impedance is studied results provide important basis for identifying bonding wire failure of IGBT module.

关 键 词：IGBT 铝键合线 杂散阻抗 

分 类 号：TN32[电子电信—物理电子学]