X波段负阻振荡器设计  

Design of a X-band negative-resistance oscillator

作　　者：曾文谊[1] 杨浩[1] 戴志伟[1] 

机构地区：[1]中国科学院微电子研究所新一代通信射频芯片技术北京市重点实验室,北京100029

出　　处：《电子技术应用》2016年第8期60-62,66,共4页Application of Electronic Technique

摘　　要：基于负阻振荡理论设计了一款X波段负阻振荡器,设计旨在提高振荡器的工作效率和加强二次谐波抑制。通过对晶体管直流偏置状态与振荡器工作效率关系的研究,选择合适的直流偏置状态提高了振荡器的工作效率。在输出匹配网络中加载一段1/8工作波长的开路线、选择一个合适的隔直电容,有效抑制二次谐波。实测结果表明,该X波段负阻振荡器振荡频率为10.81 GHz,输出功率为8.02 d Bm,二次谐波抑制度为48 d Bc,振荡器的效率为45%,偏离振荡频率100 k Hz和1 MHz处的相位噪声分别为-91.90 d Bc/Hz和-123.43 d Bc/Hz。该实测结果论证了上述设计方法的有效性,对负阻振荡器的设计提供了一定的参考意义。A X- band negative- resistance oscillator is designed by the negative- resistance method. The design aimed at improving the oscillator efficiency and the second harmonic suppression. It is found that selecting an appropriate DC bias can improve the ef-ficiency of DC to RF transformation from the research of effects of the DC bias on the oscillator efficiency. Meanwhile, the second harmonic can be effectively suppressed by adding a λ/8 open-circuited stub to the output matching network and choosing a suit able blocking capacitor. Measurements show that the oscillating frequency is 10. 81 GHz with output power of 8. 02 d Bm. The second har-monic suppression is 48 d Bc and the efficiency of DC to RF transformation is 45%. Moreover, the phase noises are- 91. 90 d Bc / Hz at 100 k Hz offset and- 123. 43 d Bc / Hz at 1 MHz offset. The effectiveness of the above design method is demonstrated, which pro-vides some references for the design of the negative- resistance oscillator.

关 键 词：负阻振荡器 效率 二次谐波抑制 相位噪声 输出匹配网络 

分 类 号：TN752[电子电信—电路与系统]