多孔硅层转移法制备超薄晶硅太阳电池的研究进展  

Research Progress in Fabrication of Ultra-Thin Crystalline Silicon Solar Cells in Transfer Approach of Porous Silicon Layer

作　　者：唐群涛 沈鸿烈[1] 邢正伟[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院江苏省能量转换材料与技术重点实验室,南京210016

出　　处：《真空科学与技术学报》2016年第7期813-823,共11页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61176062);江苏省工业支撑项目(BE2012103);江苏省前瞻性联合创新项目(BY2013003-08);江苏高校优势学科建设工程项目

摘　　要：介绍了基于电化学腐蚀多孔硅层转移法制备超薄晶硅太阳电池的研究进展,对多孔硅层转移法制备超薄晶硅太阳电池的四个主要步骤:双层多孔硅的制备、活性超薄晶硅外延层生长、基于多孔硅的层转移和超薄晶硅太阳电池研制进行了概述,并对超薄晶硅太阳电池的前景进行了展望。The latest progress in fabrication of ultra-thin crystalline silicon solar-cells,based on transfer approach of the electrochemically etched porous Si-based layers,was tentatively reviewed. The newly-developed 4-step technique includes： i） fabrication of double-layered porous Si on re-usable Si-wafer by electrochemical etching and high temperature annealing in atmosphere,such as O_2,Ar,N_2 and H_2; ii） epitaxial growth of ultra-thin（ 10 ~ 30μm）,active Si-layer on the porous Si-layers by conventional coating techniques,including the low pressure chemical vapor deposition（ LPCVD）,atmospheric pressure APCVD,hot-filament HWCVD and liquid phase epitaxy（ LPE）;iii） peeling off and transferring of the epi-Si / double-layered porous Si-foil from Si-wafer onto substrate of glass and /or stainless steel; and iv） fabrication of solar cells on the transferred ultra-thin Si-foil. Moreover,the development trends,technical problems and possible solutions in fabrication of ultra-thin crystalline Si solar cells in the transfer approach were discussed in a thought provoking way.

关 键 词：电化学腐蚀 多孔硅 层转移 超薄晶硅 太阳电池 

分 类 号：TB34[一般工业技术—材料科学与工程]