Studies on Growth of N-Polar InN Films by Pulsed Metal-organic Vapor Phase Epitaxy  

作　　者：ZHAO Baijun HAN Xu YANG Fan DONG Xin ZHANG Yuantao 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, P R. China [2]Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China

出　　处：《Chemical Research in Chinese Universities》2016年第4期669-673,共5页高等学校化学研究（英文版）

摘　　要：We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN films were investigated in details by varying the breaking time and trimethylindium（TMIn） duration of pulse cycle. It has been found that when the breaking time and the TMIn duration in each cycle remain at 30 and 60 s, respectively, the N-polar InN film obtained exhibits a better crystalline quality and greater optical properties. Meanwhile, the surface morphology and electrical properties of the N-polar InN films also greatly depend on the given growth conditions.We reported the growth of N-polar InN films on N-polar GaN/sapphire substrates by pulsed metal-organic vapor phase epitaxy. The crystalline quality, surface morphology, optical and electrical properties of N-polar InN films were investigated in details by varying the breaking time and trimethylindium（TMIn） duration of pulse cycle. It has been found that when the breaking time and the TMIn duration in each cycle remain at 30 and 60 s, respectively, the N-polar InN film obtained exhibits a better crystalline quality and greater optical properties. Meanwhile, the surface morphology and electrical properties of the N-polar InN films also greatly depend on the given growth conditions.

关 键 词：N-Polar Pulsed metal-organic vapor phase epitaxy INN 

分 类 号：O484.1[理学—固体物理] TN304.23[理学—物理]