钽箔表面化学腐蚀对混合钽电容器性能的影响  

The influence on the performance of hybrid tantalum capacitor by chemical etching on Tantalum foil

作　　者：冯庆[1,2] 贾波[1,2] 

机构地区：[1]西北有色金属研究院 [2]西安赛尔电子材料科技有限公司

出　　处：《电子世界》2016年第15期44-44,46,共2页Electronics World

摘　　要：通过化学腐蚀的方法,对混合钽电容器阴极用基体钽箔进行处理,将腐蚀后的钽箔与RuO2·nH2O活性物质使用粘结剂法制备成电容器阴极,与标称电容量为8000μF的钽阳极组装成电容器并进行性能检测,测试表明,与未进行化学腐蚀处理的钽箔制备的钽电容器相比,电容器的电容量从7533.2μF提高到了7895.6μF,损耗角正切值(tgδ)从54%降低到41%,等效串联电阻(ESR)从85mΩ降低到70mΩ,漏电流从76μA降低到了46μA,电容器的电性能得到了改善。The Tantalum foil was etched by chemical method which was used to prepare the cathode of capacitor with RuO2· nH2O.The hybrid tantalum capacitor was assembled with the cathode prepared and an tantalum anode with 8000μF nominal capacity. The test results indicate that compared to the capacitor with no chemical etching treatment, the capacity increased from 7533.2μF to 7895.6μF, the losses tangent decrease from 54% to 41%, and the equivalent series resistance reduced from 85mΩ to 70mΩ.

关 键 词：混合钽电容器 钽箔 化学腐蚀 

分 类 号：TN304.12[电子电信—物理电子学]