Characteristics of atomic layer deposited transparent aluminumdoped zinc oxide thin films at low temperature  

作　　者：Fei-Long Zhao Jun-Chen Dong Nan-Nan Zhao Jing Wu De-Dong Han Jin-Feng Kang Yi Wang 

机构地区：[1]Shenzhen Graduate School,Peking University [2]Institute of Microelectronics,Peking University

出　　处：《Rare Metals》2016年第7期509-512,共4页稀有金属（英文版）

基　　金：financially supported by the National Basic Research Program of China(No.2011CBA00600);the National Natural Science Foundation of China(No.61275025)

摘　　要：Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.

关 键 词：Atomic layer deposition Aluminum-doped ZnO thin film TRANSPARENT UNIFORMITY 

分 类 号：TN304.05[电子电信—物理电子学]